Effects of Silicon Surface Conditions on Nickel-Silicon Contacts

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Abstract
The effect of residual damage or strain, induced by mirror polishing of silicon surface, on the height of Schottky barrier formed between Ni and n-type (111) Si was investigated. If a layer of one micron or greater was removed from the silicon surface, the barrier height decreased from about 0.56 eV to about 0.53 eV. This observation shows that an effect, detectable by Schottky barrier height, exists in the layer of about one micron thick on the mirror polished surface. In addition, by heat treatment at high temperatures, the effect of gas desorption from the silicon surface on the barrier height was investigated. The barrier height was found to increase with increasing temperature of the heat treatment. By heating at 1000°C for 30 minutes, the barrier height of up to about 0.66 eV was observed.