Reaction-Process Dependence of Barrier Height between Tungsten Silicide and n-Type Silicon
- 1 January 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (1) , 425-426
- https://doi.org/10.1063/1.1657078
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Photoelectric Measurement of Tungsten Silicide and n-Type Silicon BarriersJournal of Applied Physics, 1967
- Molybdenum-Silicon Schottky BarrierJournal of Applied Physics, 1966
- Growth of Vanadium on Silicon SubstratesJournal of the Electrochemical Society, 1966
- Emissivity at 0.65 Micron of Silicon and Germanium at High TemperaturesJournal of Applied Physics, 1957