MeV metal ion implantations for buried layer fabrication in silicon
- 1 February 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 84 (2) , 153-162
- https://doi.org/10.1016/0168-583x(94)95745-2
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Synthesis of buried insulating layers in silicon by ion implantationMaterials Chemistry and Physics, 1992
- Ion beam synthesis of epitaxial silicides: fabrication, characterization and applicationsMaterials Science Reports, 1992
- A channeling/RBS study of SOI structures by SIMOX using MeV ionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Ion beam synthesis of buried compound layers: Accomplishments and perspectivesApplied Surface Science, 1989
- A study of 2 MeV oxygen implantation to form deeply buried SiO2 layersJournal of Materials Research, 1989
- Dynamic monte carlo simulation of high dose effects during ion bombardmentNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- New trends in SIMOXNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- A silicon-on-insulator structure formed by implantation of megaelectronvolt oxygenMaterials Science and Engineering: B, 1989
- Mechanisms of buried oxide formation by ion implantationApplied Physics Letters, 1987
- Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987