A study of 2 MeV oxygen implantation to form deeply buried SiO2 layers
- 1 October 1989
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 4 (5) , 1227-1232
- https://doi.org/10.1557/jmr.1989.1227
Abstract
Oxygen ions were implanted into (100) oriented single crystal Si at energies in the range of 0.6 to 2 MeV at normal and oblique (60°) incidences. Oxygen concentration profiles were measured using the 16O(d, α)14N nuclear reaction for 900 keV deuterons. The experimentally measured oxygen distributions were subsequently fitted to the theoretical profiles calculated assuming the Pearson VI distribution. The distribution moments (Rp, ΔRp, ΔR⊥ skewness, and kurtosis) were deduced as the best fit parameters and compared to the computer simulation results (TRIM 87 and PRAL). Whatever the calculation method, the measured Rp and ΔRp values are close to those predicted by the theory. Deeply buried SiO2 layers were formed using a single step implantation and annealing process. A dose of 1.8 × 1018/cm2 of 2 MeV O+ was implanted into the Si substrate maintained at a temperature of 550 °C. The implanted samples were characterized using the Rutherford backscattering (RBS)/channeling technique and cross-sectional transmission electron microscopy (XTEM). The implanted samples were subsequently annealed at 1350 °C for 4 h in an Ar ambient. The annealing process results in creating a continuous SiO2 layer, 0.4 μm thick below a 1.6 μm thick top single crystal silicon overlayer. The buried SiO2 layer contains the well-known faceted Si inclusions. The density of dislocations within the top Si layer remains lower than the XTEM detection limit of 107/cm2. Between the Si overlayer and the buried SiO2 a layer of faceted longitudinal SiO2 precipitates is present. A localized dislocation network links the precipitates to the buried SiO2 layer.Keywords
This publication has 17 references indexed in Scilit:
- Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two stepsApplied Physics Letters, 1989
- Buried oxide formation in Si by high-dose implantation of oxygenApplied Surface Science, 1987
- High temperature oxygen implantation in silicon: Soil structure formation characteristicsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Influence of oxygen implantation conditions on the properties of a high-temperature-annealed silicon-on-insulator materialApplied Physics Letters, 1986
- Microstructure of silicon implanted with high dose oxygen ionsApplied Physics Letters, 1985
- The Stopping and Range of Ions in SolidsPublished by Springer Nature ,1982
- Range and damage profiling after heavy ion implantation in the MeV regionPhysica Status Solidi (a), 1978
- Low energy ion induced damage in silicon at 50 KNuclear Instruments and Methods, 1976
- Measurement of Projected and Lateral Range Parameters for Low Energy Heavy Ions in Silicon by Rutherford BackscatteringPublished by Springer Nature ,1976