0.15 μm CMOS with high reliability and performance
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 883-886
- https://doi.org/10.1109/iedm.1993.347259
Abstract
0.15 /spl mu/m CMOSFETs with high reliability and performance have been realized. The acceptable power supply voltage V/sub cc/ was estimated to be 1.9 V. A reasonably short ring oscillator delay of 33 ps was obtained for the 1.9 V V/sub cc/, maintaining an 0.4 V threshold voltage. Anomalous surface state generation and V/sub TH/ shift for the pMOS were observed, though the degradation was less severe than the nMOS.<>Keywords
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