The electric field induced photoluminescence properties of GaAs/AlxGa1−xAs quantum-well structures grown by molecular-beam epitaxy

Publisher Website
Google Scholar
Abstract
Photoluminescence spectra were measured with molecular-beam epitaxy grown layers containing five different single quantum wells in an electric field. The photoluminescence intensity changed with the applied bias voltage in various ways according to the well width. An anti-Stokes shift in the peak energy was observed with the 2- and 3-nm quantum wells, while normal quantum confined Stark shifts were observed in the quantum wells with larger widths. These results were qualitatively interpreted in terms of the recombination rates both at the hetero-interfaces and in the quantum wells. Experimental results suggest that the impurity concentration at an interface between AlGaAs and an overlying GaAs layer is higher than that at an interface between GaAs and an overlying AlGaAs layer.