660 nm 250 mW GaInP/AlInP monolithically integratedmasteroscillator power amplifier
- 17 July 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (15) , 1314-1315
- https://doi.org/10.1049/el:19970892
Abstract
The first monolithically integrated master oscillator power amplifier is reported in the GAInP/AlInP material system. A distributed Bragg reflector forms the master oscillator, and a flared amplifier provides gain. The device provides 250 mW of single frequency and single spatial mode power at 664 nm.Keywords
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