Defect pairing diffusion, and solubility studies in selenium-doped silicon
- 1 December 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (12) , 5928-5937
- https://doi.org/10.1063/1.324560
Abstract
Se was diffused into Si doped with various concentrations of the group‐III elements B, Ga, Al, or In. Selenium acting as a double donor in silicon is found to pair with all the acceptors from the group‐III examined, and the Se‐acceptor pairs give rise to a donor level at Ec−0.2 eV. An additional donor level at Ec−0.3 eV is assigned to the first ionization level of selenium in silicon. Solubility of Se in silicon in the temperature range 850–1300 °C has been established through Hall‐effect measurements. The diffusion coefficient measurements between 800 and 1250 °C yielded 2.47 exp(−2.84 eV/kT) cm2/sec for the diffusion coefficient of Se, DSe.This publication has 4 references indexed in Scilit:
- Selenium implanation into silicon studied by DLTS techniqueApplied Physics Letters, 1977
- Sulfur in siliconJournal of Physics and Chemistry of Solids, 1959
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954