Temperature dependence of the lasing transition in high-purity GaAs
- 15 December 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (12) , 699-701
- https://doi.org/10.1063/1.1654795
Abstract
We have measured the lasing energy of optically pumped high‐purity GaAs from 2 to 300 K. Low‐temperature results show strong many‐body effects in the band‐to‐band lasing below the single‐particle band‐gap energy, and the high‐temperature data indicate that the lasing energy approaches the band gap measured by photoconductivity.Keywords
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