Long-Wavelength Shift in the Operation of Lightly Doped Semiconductor Lasers
- 1 May 1972
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (5) , 2302-2306
- https://doi.org/10.1063/1.1661495
Abstract
The observation of a long-wavelength shift in the peak of the photoemission spectra of lightly doped InP and vapor-expitaxial GaAs is reported. It is shown that this long-wavelength shift of the band-edge emission is due to electron-hole-lattice (EHL) interactions. The samples of this work are volume photoexcited in a low-loss high-Q compound optical cavity which permits the observation of recombination radiation at energies E ≥ Eg, as well as at energies E ≤ Eg.This publication has 14 references indexed in Scilit:
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