Effects of avalanche hole injection in fluorinated SiO/sub 2/ MOS capacitors
- 1 April 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (4) , 196-198
- https://doi.org/10.1109/55.215152
Abstract
Significantly improved immunity to hot-hole damage of the SiO/sub 2//Si structure is achieved by a shallow fluorine implantation into the poly-Si gate of MOS capacitors followed by a drive-in process. Compared to the nonfluorinated control, the fluorinated samples exhibit a dramatic reduction of both hole trapping probability and interface-trap generation under avalanche hole injection conditions. The degree of such an improvement increases monotonically as a function of the F implantation dose (up to 10/sup 16//cm/sup 2/). Significant decrease of the hole detrapping rate is also observed in fluorinated samples. Possible mechanisms are discussed.Keywords
This publication has 7 references indexed in Scilit:
- A high-performance sub-half micron CMOS technology for fast SRAMsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Metal–oxide–semiconductor gate oxide reliability and the role of fluorineJournal of Vacuum Science & Technology A, 1992
- Interface trap generation and electron trapping in fluorinated SiO2Applied Physics Letters, 1991
- Modeling the anneal of radiation-induced trapped holes in a varying thermal environmentIEEE Transactions on Nuclear Science, 1990
- Logarithmic detrapping response for holes injected into SiO2 and the influence of thermal activation and electric fieldsJournal of Applied Physics, 1988
- Observation of hot-hole injection in NMOS transistors using a modified floating-gate techniqueIEEE Transactions on Electron Devices, 1986
- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981