Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique
- 1 October 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (10) , 1529-1534
- https://doi.org/10.1109/t-ed.1986.22703
Abstract
A modified floating-gate technique for measuring small gate currents in MOSFET's with very high resolution (0.01 fA) is described. Using this technique, gate oxide currents due to hot-carrier injection are measured in n-channel MOSFET's. The conventional negative channel hot-electron gate oxide current is observed nearV_{g} = V_{d}and a small positive gate current occurs at low Vg. We argue that the dependencies of this small positive current on Vgand gate length, together with results from a separate floating-source experiment, are consistent only with hot-hole injection.Keywords
This publication has 11 references indexed in Scilit:
- Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping techniqueIEEE Electron Device Letters, 1986
- Hot-electron and hole-emission effects in short n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- Relationship between hot-electrons/Holes and degradation of p- and n-channel MOSFET'sIEEE Electron Device Letters, 1985
- Effects of hot-carrier trapping in n- and p-channel MOSFET'sIEEE Transactions on Electron Devices, 1983
- Electron tunneling at Al-SiO2 interfacesJournal of Applied Physics, 1981
- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981
- Sensitive technique for measuring small MOS gate currentsIEEE Electron Device Letters, 1980
- A new method to determine MOSFET channel lengthIEEE Electron Device Letters, 1980
- Hot-carrier instability in IGFET’sApplied Physics Letters, 1975