High reliability low-threshold InGaAsP ridge waveguide lasers emitting at 1.3 mu m
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 6 (1) , 25-29
- https://doi.org/10.1109/50.3958
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Low-threshold ridge waveguide lasers at λ=1.5 μmElectronics Letters, 1986
- Fabrication, characterization, and analysis of mass-transported GaInAsP/InP buried-heterostructure lasersIEEE Journal of Quantum Electronics, 1984
- InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1984
- The origin of dark spot defects in InPInGaAsP aged light emitting diodesMaterials Letters, 1984
- Some aspects of bonding-solder deterioration observed in long-lived semiconductor lasers: Solder migration and whisker growthJournal of Applied Physics, 1984
- Optical waveguiding in (In, Ga)(As, P) inverted rib waveguide lasers at 1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1983
- Performance of an improved InGaAsP ridge waveguide laser at 1.3 μmElectronics Letters, 1981
- Single-mode c.w. ridge-waveguide laser emitting at 1.55 μmElectronics Letters, 1979
- New stripe-geometry laser with simplified fabrication processElectronics Letters, 1979
- AlxGa1-xAs double-heterostructure rib-waveguide injection laserIEEE Journal of Quantum Electronics, 1975