Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 4 (3) , 498-504
- https://doi.org/10.1109/2944.704108
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etchingJournal of Crystal Growth, 1998
- Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etchingApplied Physics Letters, 1998
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodesApplied Physics Letters, 1996
- Light scattering in high-dislocation-density GaNApplied Physics Letters, 1996
- Calculated threshold currents of nitride- and phosphide-based quantum-well lasersIEEE Photonics Technology Letters, 1996
- Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- II-VI blue-green laser diodesIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Theory of Point Defects and Complexes in GaNMRS Proceedings, 1995
- Atomic geometry and electronic structure of native defects in GaNPhysical Review B, 1994
- Short-wavelength InGaAlP visible laser diodesIEEE Journal of Quantum Electronics, 1991