The Mos/InP interface
- 1 October 1975
- journal article
- research article
- Published by Taylor & Francis in C R C Critical Reviews in Solid State Sciences
- Vol. 5 (3) , 313-317
- https://doi.org/10.1080/10408437508243489
Abstract
(1975). The Mos/InP interface. C R C Critical Reviews in Solid State Sciences: Vol. 5, No. 3, pp. 313-317.Keywords
This publication has 3 references indexed in Scilit:
- Measurement of carrier-concentration profiles in epitaxial indium phosphideElectronics Letters, 1973
- Limitations of the MOS capacitance method for the determination of semiconductor surface propertiesIEEE Transactions on Electron Devices, 1965
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962