Computer calculations of sheet resistance of n- and p-type implantations in silicon
- 1 June 1972
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 14 (3-4) , 181-184
- https://doi.org/10.1080/00337577208231198
Abstract
This report describes computer calculations of sheet resistance of ion implanted layers. For Gaussian doping profiles the sheet resistance depends on the surface concentration and electrical conductivity of the implanted impurity and the standard deviation in the projected ion range. Universal curves have been produced from which the sheet resistance of any implanted silicon layer can be derived providing these parameters are known, and assuming that all the implanted atoms contribute to the electrical conductivity.Keywords
This publication has 2 references indexed in Scilit:
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962