GaInAsP/InP DH Laser with a Current Blocking Layer Made by Be Implantation
- 1 October 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (10A) , L639-641
- https://doi.org/10.1143/jjap.21.l639
Abstract
A GaInAsP/InP laser (λ=1.3 µm) with a current blocking layer made by Be implantation has been fabricated. Be-ions were implanted with 70 keV into an n-InP substrate at room temperature and 2.2×1014 cm-2 of dose. Thermal annealing was applied in a furnace during the LPE (Liquid Phase Epitaxial) growth. The breaking of the forward bias associated with the blocking region was 2 V. The minimum threshold current was 160 mA for 2.5 µm width of waveguide and 250 µm cavity length.Keywords
This publication has 4 references indexed in Scilit:
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