Improving threshold-voltage uniformity of0.1 µm InP-based MODFETs with different gate layouts
- 6 August 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (16) , 1614-1615
- https://doi.org/10.1049/el:19981118
Abstract
It is shown that the threshold-voltage uniformity of 0.1 µm InAlAs/InGaAs-based modulation-doped field-effect transistors with different numbers of gate fingers and different gate widths can be improved when a thin cap-layer structure is employed. This improvement is based on the reduction of the recess time. This reduction suppresses the difference in etching that results from the different etching rates caused by the different electrochemical effects that occur because of the varied gate layouts.Keywords
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- Selection of surface ohmic metal for fabricating0.1 µm InAlAs/InGaAs heterojunction FETswith wet-chemically-recessed gatesElectronics Letters, 1997