High-performance enhancement-mode InAlAs/InGaAs HEMTs using non-alloyed ohmic contact and Pt-based buried-gate
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this paper, we demonstrate greatly improved R/sub S/ in an E-HEMT structure using non-alloyed ohmic contact and Pt-based buried gate approaches. First, the non-alloyed ohmic contact technique was used to produce very low contact resistance and to provide sharply defined ohmic edges. Second, in the fabrication of our E-HEMT's, we first intentionally fabricated depletion-mode HEMTs (D-HEMTs). Subsequently, by annealing the sample at 250/spl deg/C, these D-HEMTs were changed to E-HEMTs as a result of the Pt-InAlAs reaction taking place under the gate electrode, while the channel region between source and gate remained undepleted. This allowed a small R/sub S/ to be maintained An excellent transconductance (g/sub m/) of 1170 mS/mm was achieved for an E-HEMT with a 0.5-/spl mu/m-gate.Keywords
This publication has 9 references indexed in Scilit:
- Device technologies for InP-based HEMTs and their application to ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Ultrahigh-speed InGaAs-based HEMT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- InP-based HEMTs: status and potentialPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Pt-based gate enhancement-mode InAlAs/InGaAs HEMTs for large-scale integrationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recessIEEE Electron Device Letters, 1992
- Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessingIEEE Electron Device Letters, 1992
- Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/AsIEEE Electron Device Letters, 1991
- Nonlinear parasitics in MODFETs and MODFET I-V characteristicsIEEE Transactions on Electron Devices, 1988
- Chapter 4 Ultra-High-Speed HEMT Integrated CircuitsPublished by Elsevier ,1987