Structural and electronic properties of glow-discharge-deposited a-Ge:H films as a function of the substrate potential
- 31 July 1991
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 22 (2-3) , 169-183
- https://doi.org/10.1016/0165-1633(91)90015-d
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Structural, optical, and electrical characterization of improved amorphous hydrogenated germaniumJournal of Applied Physics, 1990
- Correlation between the structural and the electronic transport properties of sputtered hydrogenated amorphous germanium filmsJournal of Non-Crystalline Solids, 1989
- Influence of plasma deposition on structural and electronic properties of a-Ge:HJournal of Non-Crystalline Solids, 1989
- Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloysJournal of Applied Physics, 1989
- Equilibrium dangling bond densities and its related thin-film alloysApplied Physics A, 1988
- High photoconductivity in magnetron sputtered amorphous hydrogenated germanium filmsApplied Physics Letters, 1983
- Optimal design of amorphous single-junction and tandem solar cellsSolar Cells, 1983
- Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potentialSolar Energy Materials, 1982
- Effects of inert gas dilution of silane on plasma-deposited a-Si:H filmsApplied Physics Letters, 1981
- Bombardment-produced disorder and SiH bonds in crystalline and amorphous siliconPhysical Review B, 1980