High Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- Nucleation layer evolution in metal-organic chemical vapor deposition grown GaNApplied Physics Letters, 1996
- Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN filmsApplied Physics Letters, 1996
- The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphireJournal of Electronic Materials, 1995
- High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substratesApplied Physics Letters, 1995
- Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxyApplied Physics Letters, 1995
- High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor depositionApplied Physics Letters, 1994
- Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPEJournal of Crystal Growth, 1991
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991