Sputtering of Single-Crystal Copper
- 1 February 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (2) , 700-704
- https://doi.org/10.1063/1.1708240
Abstract
Sputtering yields from the (111), (100), and (110) planes of copper single crystals were measured as a function of normally incident argon‐ion energy over the range from 100 to 200 000 eV. A comparison of the ratios of the yield curves as a function of ion energy reveals that lattice ``transparency'' is apparently not sufficient for a complete theoretical description of the sputtering process.This publication has 13 references indexed in Scilit:
- Penetration of Heavy Ions of keV Energies into Monocrystalline TungstenPhysical Review B, 1964
- Effect of Collision Focusing on Monocrystalline Sputtering Yield TheoryJournal of Applied Physics, 1964
- Angular dependent sputtering of copper single crystals by 20 keV noble gas ionsPhysica, 1964
- Sputtering of copper by 20 keV Noble gas ions at low temperaturesPhysica, 1964
- Sputtering Yields of Single Crystals Bombarded by 1- to 10-keV Ar+ IonsJournal of Applied Physics, 1963
- Angular-Dependent Sputtering of Copper Single CrystalsJournal of Applied Physics, 1963
- Sputtering Experiments with 1- to 5-keV Ar+ IonsJournal of Applied Physics, 1963
- Collection and sputtering experiments with noble gas ionsNuclear Instruments and Methods, 1961
- Sputtering of Metal Single Crystals by Ion BombardmentJournal of Applied Physics, 1955
- The sources of electron-induced contamination in kinetic vacuum systemsBritish Journal of Applied Physics, 1954