Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes
- 1 January 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 183 (1) , 91-98
- https://doi.org/10.1002/1521-396x(200101)183:1<91::aid-pssa91>3.0.co;2-l
Abstract
No abstract availableKeywords
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