Epitaxial Growth of TiSi2 (C49) on (001)Si by Rapid Thermal Annealing
- 1 October 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (10R) , 6475-6480
- https://doi.org/10.1143/jjap.36.6475
Abstract
A rapid thermal annealing at 670° C is performed for 20 s on a titanium film (35 nm) on silicon. Epitaxial growth of TiSi2 of a C49 structure is induced by the annealing, when the substrate is heated to 400° C before titanium sputtering. In contrast, a fibre texture is obtained if the substrate is not heated. The in-plane orientations determined by X-ray and electron diffraction are in good agreement with those theoretically calculated using the method of the maximum number of coincidence sites at the epitaxial interface.Keywords
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