Comment on ’’Comparison of experimental and theoretical carrier concentrations in heavily doped n-type silicon’’
- 1 August 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (8) , 3618-3619
- https://doi.org/10.1063/1.324169
Abstract
It is shown that screening effects account for most of the reduction in impurity activation energy given by recent measuremments of the Hall effect and conductivity in n‐type Si.This publication has 7 references indexed in Scilit:
- Comparison of experimental and theoretical carrier concentrations in heavily doped n-type siliconJournal of Applied Physics, 1976
- Mott transition in multivalley semiconductorsPhysical Review B, 1975
- Variation of impurity−to−band activation energies with impurity densityJournal of Applied Physics, 1975
- Low-temperature limit of screening length in semiconductorsPhysical Review B, 1974
- Concentration and Temperature Dependence of Impurity-to-Band Activation EnergiesPhysical Review B, 1972
- Energies ofEigenstates in a Static Screened Coulomb PotentialPhysical Review A, 1971
- Mobility of Electrons in Compensated Semiconductors. II. TheoryPhysical Review B, 1967