Single event effect characteristics of CMOS devices employing various epi-layer thicknesses
Open Access
- 18 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Single Event Latchup (SEL) in IDT 7187 SRAMs-dependence on ion penetration depthPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Mechanisms for single-particle latchup in CMOS structuresPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Single event effect proton and heavy ion test results in support of candidate NASA programsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Single-event-effect mitigation from a system perspectiveIEEE Transactions on Nuclear Science, 1996
- Latch-up on CMOS/EPI devicesIEEE Transactions on Nuclear Science, 1990