A low-energy sims investigation of the analyzing depth by measuring diffusion coefficients using a nickel deposited copper single crystal
- 2 November 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 177 (1) , 229-237
- https://doi.org/10.1016/0039-6028(86)90270-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A static-SIMS study of thin nickel film on copper substrateSurface Science, 1983
- A static-sims study on preferential sputtering on copper-nickel alloy surfaceSurface Science, 1981
- Quantitative depth profiling in surface analysis: A reviewSurface and Interface Analysis, 1980
- Edge-effects correction in depth profiles obtained by ion-beam sputteringNuclear Instruments and Methods, 1980
- The depth resolution of sputter profilingApplied Physics A, 1979
- Composition of binary alloys by simultaneous SIMS and AES measurementsJournal of Vacuum Science and Technology, 1976