Direct observation of electrical faults in planar transistors made in epitaxially grown silicon
- 1 May 1968
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (5) , 567-568
- https://doi.org/10.1016/0038-1101(68)90096-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The direct observation of electrical leakage paths due to crystal defects by use of the scanning electron microscopeSolid-State Electronics, 1966
- Observations of Individual Dislocations and Oxygen Precipitates in Silicon with a Scanning Electron Beam MethodJournal of Applied Physics, 1965
- Generation and Distribution of Dislocations by Solute DiffusionJournal of Applied Physics, 1961
- Slip Patterns on Boron-Doped Silicon SurfacesJournal of Applied Physics, 1961