Temperature dependence of avalanche breakdown voltage Temperature dependence of avalanche breakdown voltage inp—njunctions†

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Abstract
A theoretical analysis of the temperature dependence of the avalanche breakdown voltage in p-n junctions has been performed. The analysis incorporates a technique which permits an estimate of the temperature dependence of the parameters involved in the empirical ionization expressions directly from computer generated universal Baraff curves. Experimental results obtained from abrupt and linearly graded silicon and linearly graded gallium arsenide junctions are shown to compare satisfactorily with the theoretical predictions.