A simple self-aligned Si bipolar transistor for high-speed integrated circuits

This publication has 6 references indexed in Scilit:

• Multi-gigabit-per-second silicon bipolar ICs for future optical-fiber transmission systems
  IEEE Journal of Solid-State Circuits, 1988
• An advanced high-performance trench-isolated self-aligned bipolar technology
  IEEE Transactions on Electron Devices, 1987
• 5-Gbit/s Si integrated regenerative demultiplexer and decision circuit
  IEEE Journal of Solid-State Circuits, 1987
• Design considerations of high-performance narrow-emitter bipolar transistors
  IEEE Electron Device Letters, 1987
• A 4:1 time-division multiplexer IC for bit rates up to 6 Gbit/s based on a standard bipolar technology
  IEEE Journal of Solid-State Circuits, 1986
• A 30-ps Si bipolar IC using super self-aligned process technology
  IEEE Transactions on Electron Devices, 1986