Persistent photoconductivity in n-type GaN
- 25 August 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (8) , 1098-1100
- https://doi.org/10.1063/1.119738
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Strain-related phenomena in GaN thin filmsPhysical Review B, 1996
- Metastability and persistent photoconductivity in Mg-doped p-type GaNApplied Physics Letters, 1996
- Electron-Phonon Scattering in Si-Doped GaNMRS Proceedings, 1996
- Persistent Photoconductivity in n-Type GaNMRS Proceedings, 1996
- Percolation transition of persistent photoconductivity in II-VI mixed crystalsPhysical Review Letters, 1990
- Deep donor levels (D X centers) in III-V semiconductorsJournal of Applied Physics, 1990
- Theory of the Atomic and Electronic Structure ofCenters in GaAs andAlloysPhysical Review Letters, 1988
- Effect of the silicon doping concentration on the recombination kinetics of D X centers in Al0.35Ga0.65AsApplied Physics Letters, 1986
- Decay kinetics of persistent photoconductivity in semiconductorsPhysical Review B, 1986
- Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound SemiconductorsPhysical Review Letters, 1977