Sub-Boundary Formation and Suppression in Silicon films Recrystallized by Scanned Zone Melting
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Suppression of low angle grain boundaries in seeded thick Si films recrystallized between SiO2 layersApplied Physics Letters, 1983
- Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater OvenJournal of the Electrochemical Society, 1982
- Zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si substratesApplied Physics Letters, 1982
- Linear Zone-Melt Recrystallized Si Films Using Incoherent LightMRS Proceedings, 1982
- Defect Etch for Silicon EvaluationJournal of the Electrochemical Society, 1979