Zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si substrates
- 15 July 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (2) , 186-188
- https://doi.org/10.1063/1.93456
Abstract
We have constructed a scaled‐up graphite strip‐heater system that permits routine zone‐melting recrystallization of 3‐in.‐diam Si films on SiO2‐coated Si wafers. The recrystallized films are similar in crystal quality to those obtained previously in a smaller system, except that they contain higher densities of small protrusions along the subgrain boundaries. Seeded recrystallization has been accomplished by scribing a stripe opening, that extends through the Si and SiO2 films to the Si wafer.Keywords
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