Growth of single crystal Ge films on GaAs and InGaP and highly oriented Au films on Ge
- 16 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (20) , 2697-2699
- https://doi.org/10.1063/1.111495
Abstract
Single crystal germanium films were deposited on (100) GaAs and InGaP substrates, and highly oriented gold films were deposited on the germanium films by ultrahigh vacuum E-beam evaporation. They were characterized by double crystal x-ray diffraction (DXRD), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The germanium film grew epitaxially with a smooth, abrupt interface, and the highly oriented gold film formed a smooth interface with the germanium and had a (100)Au∥(100)Ge and (001)Au∥[011]Ge or [001]Au∥[0-1 1]Ge orientation relationship. Large grains with one or the other orientation relationship could be distinguished in the SEM. TEM micrographs show that the grains have a periodic dislocation pattern indicative of heteroepitaxy, and the grain boundaries appear to have a low energy. No contamination was detected in the gold film away from the interface with the germanium, and there was significant channeling of the RBS beam when it was normal to the gold film.Keywords
This publication has 10 references indexed in Scilit:
- The microstructure and electrical properties of nonalloyed epitaxial Au-Ge ohmic contacts to n-GaAsJournal of Applied Physics, 1992
- Mechanisms for the formation of low temperature, non-alloyed Au-Ge ohmic contacts to n-GaAsJournal of Electronic Materials, 1990
- Microstructure and contact resistance temperature dependence of Pt/Ti ohmic contact to Zn-doped GaAsJournal of Applied Physics, 1990
- Low-resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd schemeApplied Physics Letters, 1989
- Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of GeJournal of Applied Physics, 1987
- Low-temperature annealed contacts to very thin GaAs epilayersApplied Physics Letters, 1986
- Non-alloyed ohmic contact to n-GaAs by solid phase epitaxyApplied Physics Letters, 1985
- Orientation relationships between thin films of Au, {100} substrates of GaAs, and their reaction productsJournal of Vacuum Science & Technology A, 1983
- Low-temperature sintered AuGe/GaAs ohmic contactJournal of Applied Physics, 1982
- Ohmic contacts to n-GaAs using low-temperature annealJournal of Applied Physics, 1981