Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon

A differential Hall effect technique has been developed to obtain doping profiles at a depth resolution down to $2\mathrm{nm}$ with junction depths of about $20\mathrm{nm}$ . We have determined the electrical characteristics of $5\times {10}^{14}{\mathrm{Sb}}^{+}{\mathrm{cm}}^{-2}$ implanted in (100) silicon at an energy of $5\mathrm{keV}$ . A comparison was made between carrier concentration profiles and secondary ion mass spectroscopy measurements of the atomic profiles as a function of annealing temperature. We have profiled single energy implants of antimony and also double implants; the latter enables complete profiles to be measured down to the background level of about ${10}^{18}{\mathrm{cm}}^{-3}$ .