Er-Doping of Gan and Related Alloys

This publication has 26 references indexed in Scilit:

• Growth and fabrication of GaNInGaN microdisk laser structures
  Solid-State Electronics, 1996
• Wet chemical etching of AlN
  Applied Physics Letters, 1995
• High temperature electron cyclotron resonance etching of GaN, InN, and AlN
  Applied Physics Letters, 1995
• Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
  Applied Physics Letters, 1995
• Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources
  Journal of Applied Physics, 1994
• Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si
  Physical Review B, 1994
• Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN
  Applied Physics Letters, 1994
• Optical doping of silicon with erbium by ion implantation
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
• Lattice location of erbium implanted into GaAs
  Solid State Communications, 1991
• Photoluminescence of Zn-implanted GaN
  Applied Physics Letters, 1974