Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources
- 1 August 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (3) , 1585-1591
- https://doi.org/10.1063/1.357737
Abstract
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- Movpe of Rare Earth Doped III-V SemiconductorsMRS Proceedings, 1993
- Mocvd Growth and Properties of Erbium Doped GaAsMRS Proceedings, 1993
- MOVPE grown InP:Er layers using Er(MeCp)3 and Er(IpCp)3Journal of Crystal Growth, 1990
- Extremely sharp erbium-related intra-4f-shell photoluminescence of erbium-doped GaAs grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Growth of erbium-doped GaAs and InP by metalorganic chemical vapor deposition using Er(CH3C5H4)3 and Er(C5H5)3Journal of Crystal Growth, 1988
- Er-doped InP and GaAs grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Photoluminescence excitation measurements on GaAs:Er grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Incorporation of erbium in GaAs by liquid-phase epitaxyJournal of Applied Physics, 1987
- An alternative Mg precursor for p-type doping of OMVPE grown materialJournal of Crystal Growth, 1986
- Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaPJournal of Applied Physics, 1986