Growth of erbium-doped GaAs and InP by metalorganic chemical vapor deposition using Er(CH3C5H4)3 and Er(C5H5)3
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 583-588
- https://doi.org/10.1016/0022-0248(88)90587-8
Abstract
No abstract availableKeywords
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