Broadening of the longitudinal modes due to transient heating in optically pumped semiconductor lasers
- 1 May 1977
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (5) , 1995-1997
- https://doi.org/10.1063/1.323907
Abstract
We have found that the output spectra of cleaved GaAs lasers are broadened when they are optically pumped with a high-energy pulsed laser. We believe the effect is due to transient heating. A one-dimensional heat-flow equation is solved and the results predict the observed broadening. Ways of improving the mode spectra by reducing the broadening are discussed.This publication has 10 references indexed in Scilit:
- Optically pumped GaAs-Ga1−xAlxAs half-ring laser fabricated by liquid-phase epitaxy over chemically etched channelsApplied Physics Letters, 1976
- Stimulated and laser emission involving nitrogen isoelectronic impurities in AlxGa1−xAs (x=0.39, 77 °K)Applied Physics Letters, 1976
- Double-heterostructure GaAs distributed-feedback laserApplied Physics Letters, 1974
- Optically pumped grown GaAs mesa surface laserApplied Physics Letters, 1974
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973
- Optically pumped room-temperature GaAs lasersIEEE Journal of Quantum Electronics, 1973
- Optically Pumped Volume-Excited cw Room-Temperature In1−x Gax P (x ≤ 0.60) Platelet LasersApplied Physics Letters, 1972
- Mode Reflectivity and Waveguide Properties of Double-Heterostructure Injection LasersJournal of Applied Physics, 1971
- Optimum Stripe Width for Continuous Operation of GaAs Junction LasersJournal of Applied Physics, 1969
- Optically Pumped Thin-Platelet Semiconductor LasersJournal of Applied Physics, 1968