Optical properties of A1P-GaP short-period superlattices
- 1 April 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4-6) , 649-652
- https://doi.org/10.1016/0038-1101(94)90267-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Optical properties of GaP/AlP short-period superlattices grown by gas source molecular beam epitaxyApplied Physics Letters, 1993
- Photoluminescence and electroreflectance of GaP/AlP superlattices grown by gas source MBESurface Science, 1992
- MOVPE growth of short-period superlattices of AlP-GaP and its application for light-emitting diodesJournal of Crystal Growth, 1992
- Characterization of AlGaP/GaP heterostructures grown by MOVPEJournal of Crystal Growth, 1992
- Band Discontinuity at AlxGa1-xP/GaP Heterointerfaces Studied by Capacitance MeasurementsJapanese Journal of Applied Physics, 1992
- Short-Period Superlattices of (GaP)n(AlP)n Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1991
- Possibility of green light emission from GaP/AlP (001) superlatticesJournal of Luminescence, 1987
- Dispersion Parameters of the Refractive Index in III-V Compound SemiconductorsJapanese Journal of Applied Physics, 1982
- Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structureApplied Physics A, 1974