Kinetic model for hydrogen reactions in boron-doped silicon

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Abstract
A comprehensive kinetic model for the in‐diffusion of hydrogen atoms in boron‐doped silicon during low‐temperature plasma hydrogenation treatments is presented. The model accounts for several commonly observed features of secondary ion mass spectrometry profiles of hydrogenated p‐type samples of varying resistivities. In high‐resistivity material, the hydrogen profile is explained by invoking hydrogen dimer formation which, for short plasma exposure times, appears to follow steady‐state kinetics. Hydrogen profiles in more heavily dopedp‐type samples, often assumed to be controlled by a single pairing reaction between H+ ions and dopant sites, are shown to be consistent with the trapping of several hydrogen atoms at each acceptor site.