Novel characterization of implant damage in SiO2 by nuclear-deposited energy
- 20 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (12) , 1106-1108
- https://doi.org/10.1063/1.101429
Abstract
Etching enhancement in through‐implanted SiO2 has been characterized by nuclear‐deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si‐O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO2, and to be a good measure of degradation. The structural change of SiO2 stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear‐deposited energy larger than 3.4×1023 eV/cm3. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO2.Keywords
This publication has 5 references indexed in Scilit:
- Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxideJournal of Applied Physics, 1984
- Precise Profiles for Arsenic Implanted in Si and SiO2 over a Wide Implantation Energy Range (10 keV–2.56 MeV)Japanese Journal of Applied Physics, 1982
- Residual disorder in Si from oxygen recoils in annealed ``through-oxide'' arsenic implantsApplied Physics Letters, 1974
- Range distribution of implanted ions in SiO2, Si3N4, and Al2O3Applied Physics Letters, 1973
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972