Si incorporation and Burstein–Moss shift in n-type GaAs
- 31 May 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 60 (1) , 1-11
- https://doi.org/10.1016/s0921-5107(99)00016-1
Abstract
No abstract availableKeywords
This publication has 57 references indexed in Scilit:
- Room-temperature photoreflectance and photoluminescence of heavily Si-doped GaAsJournal of Applied Physics, 1995
- Tabulation of the theoretical band-to-band luminescence spectra of heavily doped GaAs and application to experimental n-type GaAs spectraJournal of Applied Physics, 1990
- Plasmons, photoluminescence, and band-gap narrowing in very heavily doped n-GaAsApplied Physics Letters, 1990
- Band-gap narrowing in highly doped n- and p-type GaAs studied by photoluminescence spectroscopyJournal of Applied Physics, 1989
- A comparison of semiconductor devices for high-speed logicProceedings of the IEEE, 1982
- Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1982
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- The Interpretation of the Properties of Indium AntimonideProceedings of the Physical Society. Section B, 1954
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954