Cryogenic processed metal-semiconductor-metal (MSM) photodetectors on MBE grown ZnSe
- 1 June 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (6) , 1127-1134
- https://doi.org/10.1109/16.766874
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layersApplied Physics Letters, 1997
- PIN photodiodes using nitrogen ion implantation on ZnSe/GaAs heterostructurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997
- Cross-sectional TEM of Pd/InP and Au/lnP interfaces formed at substrate temperatures near 300 and 77KJournal of Electronic Materials, 1996
- High-performance InP/Ga0.47In0.53As/InP metal-semiconductor-metal photodetectors with a strained Al0.1In0.9P barrier enhancement layerApplied Physics Letters, 1995
- Electrical properties of Schottky contacts to N-type ZnS0.07Se0.93 epilayersJournal of Applied Physics, 1995
- Photocurrent gain mechanisms in metal-semiconductor-metal photodetectorsSolid-State Electronics, 1994
- Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layersJournal of Crystal Growth, 1992
- Use of active loads with MSM photodetectors in digital GaAs MESFET photoreceiversJournal of Lightwave Technology, 1992
- High-barrier height Schottky diodes on N-InP by deposition on cooled substratesApplied Physics Letters, 1991
- Optical Properties of ZnSe Epilayers and FilmsPhysica Status Solidi (a), 1990