Effect of High Current Injection on the Blue Radiative Recombination in InGaN Single Quantum Well Light Emitting Diodes

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Abstract
Radiative recombination properties of blue electroluminescence (EL) in the vicinity of 460 nm (about 2.7 eV) in an InGaN-based single quantum well light emitting diode (LED) have been investigated at 77 K under forward-bias pulsed high-current injection condition. The 460 nm blue emission band accompanying the LO-phonon sidebands was clearly observed at forward-biased steady-state currents, while its LO-phonon replicas were smeared out with increasing pulsed current. It is revealed that the forward-biased injection EL spectrum reflects the distribution function of hot electrons injected into the active layer. Emission spectral characteristics can be quantitatively explained by the drifted Maxwellian distribution function of electrons. The temperature of hot electrons was estimated to be about 400 K at current density of about 4500 A/cm2, which is much higher than the lattice temperature.