Stress-induced rearrangement of oxygen atoms in Si investigated by a monoenergetic positron beam
- 15 December 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (12) , 7543-7548
- https://doi.org/10.1063/1.349707
Abstract
A monoenergetic positron beam has been used to investigate the state of interstitial oxygen in Czochralski‐grown Si with coverage of SiO2 (100 nm) and poly‐Si (200 nm)/SiO2 (100 nm), respectively. It was found that (i) the growth of SiO2 gives rise to a strong Doppler broadening of positrons in the bulk of Si and (ii) such a broadening can be recovered to the original level by annealing at 450 °C, by the removal of overlayers using chemical etching and by long‐term aging at room temperature. This broadening was assigned to arise from the positron trapping by oxygen interstitial clusters. It was concluded that film stress is responsible for the rearrangement of oxygen atoms in Czochralski‐grown Si.This publication has 35 references indexed in Scilit:
- Defects and Oxygen in Silicon Studied by PositronsPhysica Status Solidi (a), 1987
- Oxygen in silicon: A positron annihilation investigationJournal of Applied Physics, 1986
- Current trends in silicon researchProgress in Crystal Growth and Characterization, 1981
- Nucleation of oxygen precipitations and efficiency of internal gettering centres in Czochralski siliconPhysica Status Solidi (a), 1981
- Twenty five years of semiconductor-grade siliconPhysica Status Solidi (a), 1981
- Improved Intrinsic Gettering Technique for High-Temperature-Treated CZ Silicon WafersJapanese Journal of Applied Physics, 1981
- Dislocation pinning effect of oxygen atoms in siliconApplied Physics Letters, 1977
- Nucleation of CuSi precipitate colonies in oxygen-rich siliconApplied Physics Letters, 1976
- Effect of oxygen on dislocation movement in siliconJournal of Applied Physics, 1975
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958