Nucleation of oxygen precipitations and efficiency of internal gettering centres in Czochralski silicon
- 16 November 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 68 (1) , 253-260
- https://doi.org/10.1002/pssa.2210680134
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Improved Intrinsic Gettering Technique for High-Temperature-Treated CZ Silicon WafersJapanese Journal of Applied Physics, 1981
- Precipitation and redistribution of oxygen in Czochralski-grown siliconApplied Physics Letters, 1980
- The effect of doping on the formation of swirl defects in dislocation-free czochralski-grown silicon crystalsJournal of Crystal Growth, 1980
- On the interaction between crystal defects and impurities in silicon investigated by electron microscopic methodsPhysica Status Solidi (a), 1980
- Carbon and oxygen role for thermally induced microdefect formation in silicon crystalsApplied Physics Letters, 1979
- The effect of doping on microdefect formation in as-grown dislocation-free Czochralski silicon crystalsApplied Physics Letters, 1979
- The effect of SiO2 precipitation in Si on generation currents in MOS capacitorsJournal of Applied Physics, 1979
- Influence of Nitrogen Heat-Treatment on Silicon SurfacesJapanese Journal of Applied Physics, 1978
- Interstitial oxygen gettering in Czochralski silicon wafersApplied Physics Letters, 1977
- Intrinsic gettering by oxide precipitate induced dislocations in Czochralski SiApplied Physics Letters, 1977