The effect of SiO2 precipitation in Si on generation currents in MOS capacitors
- 1 March 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (3) , 1399-1402
- https://doi.org/10.1063/1.326121
Abstract
Silicon substrates of various oxygen contents were heat treated to cause SiO2 precipitation. Generation currents in pulse-depleted MOS capacitors made on these substrates were measured. In substrates from the seed section of the crystal, SiO2 precipitation began during growth of the MOS oxide, and the generation currents were very low for all the anneal cycles used. In substrates from the tail section of the crystal, where the SiO2 precipitated more slowly, the generation currents decreased with anneal time and finally leveled off at a very low value. MOS capacitors were also formed on substrates in which the precipitates extended to the surface. Such MOS capacitors all showed extremely high generation currents. The conclusion that ’’internal gettering’’ by SiO2 precipitates in the bulk reduces generation currents was cross-checked with intentional copper decoration.This publication has 7 references indexed in Scilit:
- A method for finding critical stresses of dislocation movementApplied Physics Letters, 1977
- Dislocation pinning effect of oxygen atoms in siliconApplied Physics Letters, 1977
- Intrinsic gettering by oxide precipitate induced dislocations in Czochralski SiApplied Physics Letters, 1977
- Defects in silicon substratesJournal of Vacuum Science and Technology, 1977
- Nucleation of CuSi precipitate colonies in oxygen-rich siliconApplied Physics Letters, 1976
- A New Fast Technique for Large‐Scale Measurements of Generation Lifetime in SemiconductorsJournal of the Electrochemical Society, 1976
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967