Amorphous silicon produced by a new thermal chemical vapor deposition method using intermediate species SiF2
- 15 October 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (8) , 833-835
- https://doi.org/10.1063/1.96000
Abstract
Amorphous silicon (a‐Si) films are deposited at about 320 °C by a new thermal chemical vapor deposition method. In this method, the gas mixture of intermediate species SiF2 and H2, decomposed thermally by the catalytic reaction, is used as a material gas. It is found that the photosensitivity of the a‐Si film for AM1 of 100 mW/cm2 exceeds over 106 and that the spin density is as low as 1.5×1016 cm−3 for the film deposited with a rate of several Å/s.Keywords
This publication has 5 references indexed in Scilit:
- A new hydro-fluorinated amorphous silicon produced by using intermediate species SiF2Journal of Non-Crystalline Solids, 1983
- Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor depositionApplied Physics Letters, 1981
- Chemical vapor deposition of amorphous silicon prepared from SiF2 gasJournal of Applied Physics, 1981
- Silicon-Fluorine Chemistry. I. Silicon Difluoride and the Perfluorosilanes1Journal of the American Chemical Society, 1965
- The atomization of hydrogen on tungstenProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959