Hot-electron transport through thin dielectric films: Boltzmann theory and electron spectroscopy
- 15 December 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (17) , 12567-12581
- https://doi.org/10.1103/physrevb.38.12567
Abstract
The transport problem of hot quasifree electrons through thin planar dielectric films of thickness d is considered by solving the steady-state Boltzmann equation for the electron current density J(E,μ,x), 0≤x≤d, within the film. The current density of injected electrons at x=0, (E,μ), evolves to J(E,μ,d), the current density of electrons escaping the layer at x=d, which is calculated.
Keywords
This publication has 37 references indexed in Scilit:
- Monoenergetic and Directed Electron Emission from a Large-Bandgap Organic Insulator with Negative Electron AffinityEurophysics Letters, 1988
- Hot electrons in one dimension. II. BackscatteringPhysical Review B, 1987
- Direct Observation of the Threshold for Electron Heating in Silicon DioxidePhysical Review Letters, 1986
- Monte Carlo Study of High-Energy Electrons in Silicon DioxidePhysical Review Letters, 1985
- Effects of elastic photoelectron collisions in quantitative XPSSurface and Interface Analysis, 1984
- Monte-Carlo Studies of the Electron Mobility in SiO2Physica Status Solidi (a), 1982
- Analytical Models for Thermal Radiation in Fibrous InsulationsJournal of Thermal Insulation, 1980
- Effect of Lattice Vibrations in a Multiple-Scattering Description of Low-Energy Electron Diffraction. II. Double-Diffraction Analysis of the Elastic Scattering Cross SectionPhysical Review B, 1970
- Effect of Lattice Vibrations in a Multiple-Scattering Description of Low-Energy Electron Diffraction. I. Formal Perturbation TheoryPhysical Review B, 1970
- Maximum Anisotropy Approximation for Calculating Electron Distributions; Application to High Field Transport in SemiconductorsPhysical Review B, 1964